Copyright 1995, Institute for Scientific Information Inc.

Database : Science Citation Index



(18 other papers about CT: medical imaging) 

(19)  TI: PERFORMANCE OF A BAF2-TMAE PROTOTYPE DETECTOR FOR USE IN PET

(20)  TI: EXPERIMENTAL-VERIFICATION OF BREMSSTRAHLUNG PRODUCTION AND 
          DOSIMETRY PREDICTIONS AS A FUNCTION OF ENERGY AND ANGLE

(21)  TI: EFFECT OF NEUTRON-IRRADIATION ON THE BREAKDOWN VOLTAGE OF POWER 
          MOSFETS

(22)  TI: TLBRXI1-X PHOTODETECTORS FOR SCINTILLATION SPECTROSCOPY

(23)  TI: SINGLE EVENT EFFECTS AND PERFORMANCE PREDICTIONS FOR SPACE 
          APPLICATIONS OF RISC PROCESSORS

(24)  TI: CORRECTED MULTIPLE UPSETS AND BIT REVERSALS FOR IMPROVED 1-S 
          RESOLUTION MEASUREMENTS

(25)  TI: CONSIDERATIONS IN THE CONTROL OF PWR-TYPE MULTIMODULAR REACTOR 
          PLANTS

(26)  TI: A NEW APPROACH TO CONTROL OF XENON SPATIAL OSCILLATION DURING 
          LOAD FOLLOW OPERATION VIA ROBUST SERVO SYSTEMS

(27)  TI: A MEASUREMENT OF THE FIRST TOWNSEND COEFFICIENT AS A FUNCTION OF 
          THE ELECTRIC-FIELD FOR A TMAE-HE MIXTURE

(28)  TI: RADIATION EFFECTS RESEARCH IN THE 60S

(29)  TI: SATURATION OF THE DOSE-RATE RESPONSE OF BIPOLAR-TRANSISTORS BELOW 
          10-RAD(SIO2)/S - IMPLICATIONS FOR HARDNESS ASSURANCE

(30)  TI: THE IMPROVEMENT OF MOSFET PREDICTION IN-SPACE ENVIRONMENTS USING 
          THE CONVERSION MODEL

(31)  TI: RADIATION EFFECTS BEFORE 1960

(32)  TI: A COMPLETE RADIATION RELIABILITY SOFTWARE SIMULATOR

(33)  TI: RADIATION EFFECTS R-AND-D IN THE 1970S - A RETROSPECTIVE VIEW

(34)  TI: MAPPING CMOS RADIATION TOLERANCE DATA ON A 4-LANE CHART

(35)  TI: TOTAL-DOSE CORRELATION OF 4007 DEVICES FLOWN ON THE CRRES MEP 
          EXPERIMENT

(36)  TI: EFFECT OF TEST METHOD ON THE FAILURE DOSE OF SEEQ 28C256 EEPROM

(37)  TI: FAST SWITCHED-BIAS ANNEALING OF RADIATION-INDUCED OXIDE-TRAPPED 
          CHARGE AND ITS APPLICATION FOR TESTING OF RADIATION EFFECTS IN 
          MOS STRUCTURES

(38)  TI: CRITICAL-EVALUATION OF THE PULSED-LASER METHOD FOR SINGLE EVENT 
          EFFECTS TESTING AND FUNDAMENTAL-STUDIES

(39)  TI: COMPARISON OF HOT-CARRIER AND RADIATION-INDUCED INCREASES IN BASE 
          CURRENT IN BIPOLAR-TRANSISTORS

(40)  TI: A METHODOLOGY FOR THE IDENTIFICATION OF WORST-CASE TEST VECTORS 
          FOR LOGICAL FAULTS INDUCED IN CMOS CIRCUITS BY TOTAL-DOSE

(41)  TI: EVALUATION OF A METHOD FOR ESTIMATING LOW-DOSE-RATE IRRADIATION 
          RESPONSE OF MOSFETS

(42)  TI: EFFECTS OF BURN-IN ON RADIATION HARDNESS

(43)  TI: DEPENDENCE OF TOTAL-DOSE RESPONSE OF BIPOLAR LINEAR MICROCIRCUITS 
          ON APPLIED DOSE-RATE

(44)  TI: HARDNESS VARIABILITY IN COMMERCIAL TECHNOLOGIES

(45)  TI: THE EFFECTS OF IONIZING-RADIATION ON COMMERCIAL POWER MOSFETS 
          OPERATED AT CRYOGENIC TEMPERATURES

(46)  TI: STUDY OF PROTON RADIATION EFFECTS ON ANALOG IC DESIGNED FOR 
          HIGH-ENERGY PHYSICS IN A BICMOS-JFET RADHARD SOI TECHNOLOGY

(47)  TI: GAMMA-RAY AND FAST-NEUTRON RADIATION EFFECTS ON THIN-FILM 
          SUPERCONDUCTORS

(48)  TI: MEASUREMENT OF CAPACITANCE TRANSIENTS WITH ATTOFARAD RESOLUTION 
          IN A MICROWAVE VARACTOR DIODE AFTER CO-60 IRRADIATION

(49)  TI: TOTAL-DOSE HARDNESS OF FIELD-PROGRAMMABLE GATE ARRAYS

(50)  TI: A MODEL FOR THE BIPOLAR-LIKE RESPONSE OF GAAS-MESFETS TO A 
          HIGH-DOSE-RATE ENVIRONMENT

(51)  TI: A RADIATION-HARDENED 32-BIT MICROPROCESSOR-BASED ON THE 
          COMMERCIAL CMOS PROCESS

(52)  TI: DEVELOPMENT OF A RADIATION-HARDENED NPN BIPOLAR-TRANSISTOR FOR A 
          64K CMOS FUSIBLE-LINK PROM

(53)  TI: A NEW PROCEDURE FOR STATIC RAM EVALUATION UNDER X-RAY PULSES

(54)  TI: TOTAL IONIZING DOSE EFFECTS ON HIGH-RESOLUTION (12-BIT, 14-BIT) 
          ANALOG-TO-DIGITAL CONVERTERS

(55)  TI: RADIATION EFFECTS IN 5-VOLT AND ADVANCED LOWER VOLTAGE DRAMS

(56)  TI: THE SURFACE GENERATION HUMP IN IRRADIATED POWER MOSFETS

(57)  TI: GERMANIUM CONTENT DEPENDENCE OF RADIATION-DAMAGE IN STRAINED 
          SI1-XGEX EPITAXIAL DEVICES

(58)  TI: STUDY OF PUNCH-THROUGH CHARACTERISTICS IN IRRADIATED MOSFETS

(59)  TI: TOTAL-DOSE EFFECTS IN CONVENTIONAL BIPOLAR-TRANSISTORS AND LINEAR 
          INTEGRATED-CIRCUITS

(60)  TI: SYNERGETIC EFFECTS OF RADIATION STRESS AND HOT-CARRIER STRESS ON 
          THE CURRENT GAIN OF NPN BIPOLAR JUNCTION TRANSISTORS

(61)  TI: TOTAL-DOSE EFFECTS ON NEGATIVE VOLTAGE REGULATOR

(62)  TI: CLEMENTINE RRELAX SRAM PARTICLE SPECTROMETER

(63)  TI: ENVIRONMENTAL STABILITY OF LOW ABSORPTIVITY OPTICAL SOLAR 
          REFLECTORS AND THEIR IMPACT ON SPACECRAFT CHARGING

(64)  TI: EFFECTS OF REALISTIC SATELLITE SHIELDING ON SEE RATES

(65)  TI: A SIMPLE ALGORITHM FOR PREDICTING PROTON SEU RATES IN-SPACE 
          COMPARED TO THE RATES MEASURED ON THE CRRES SATELLITE

(66)  TI: SINGLE EVENT UPSETS CORRELATED WITH ENVIRONMENT

(67)  TI: RADIATION-BELT AND TRANSIENT SOLAR-MAGNETOSPHERIC EFFECTS ON 
          HIPPARCOS RADIATION BACKGROUND

(68)  TI: APPLYING NEW SOLAR PARTICLE EVENT MODELS TO INTERPLANETARY 
          SATELLITE PROGRAMS

(69)  TI: THE SINGLE EVENT UPSET ENVIRONMENT FOR AVIONICS AT HIGH-LATITUDE

(70)  TI: RADIATION ENVIRONMENT MEASUREMENTS WITH THE COSMIC-RAY 
          EXPERIMENTS ON-BOARD THE KITSAT-1 AND POSAT-1 MICRO-SATELLITES

(71)  TI: SEE IN-FLIGHT MEASUREMENT AN THE MIR ORBITAL STATION

(72)  TI: BIOPAN - FLIGHT EXPERIMENT CARD

(73)  TI: MEASUREMENT AND MODELING OF RADIATION RESPONSE OF MULTILAYER 
          BESOI BURIED INSULATORS

(74)  TI: RADIATION RESPONSE OF FULLY-DEPLETED MOS-TRANSISTORS FABRICATED 
          IN SIMOX

(75)  TI: NOISE CHARACTERIZATION OF TRANSISTORS IN A 1.2-MU-M CMOS SOI 
          TECHNOLOGY UP TO A TOTAL-DOSE OF 12-MRAD-(SI)

(76)  TI: FULLY-DEPLETED SUBMICRON SOI FOR RADIATION-HARDENED APPLICATIONS

(77)  TI: THEORETICAL-STUDY OF SEUS IN 0.25-MU-M FULLY-DEPLETED CMOS SOI 
          TECHNOLOGY

(78)  TI: IMPROVEMENT OF RADIATION HARDNESS IN FULLY-DEPLETED SOI N-MOSFETS 
          USING GE-IMPLANTATION

(79)  TI: EFFECT OF SUPPLEMENTAL O-IMPLANTATION ON THE RADIATION-INDUCED 
          HOLE TRAPS IN SIMOX BURIED OXIDES

(80)  TI: THE USE OF SPECTROSCOPIC ELLIPSOMETRY TO PREDICT THE RADIATION 
          RESPONSE OF SIMOX

(81)  TI: PROTON IRRADIATION EFFECTS ON ADVANCED DIGITAL AND MICROWAVE 
          III-V COMPONENTS

(82)  TI: SINGLE EVENT UPSET AT GIGAHERTZ FREQUENCIES

(83)  TI: SINGLE EVENT UPSETS IN GALLIUM-ARSENIDE DYNAMIC LOGIC

(84)  TI: SOI68T020 HEAVY-IONS EVALUATION

(85)  TI: CHARACTERIZATION OF SINGLE HARD ERRORS (SHE) IN 1M-BIT SRAMS FROM 
          SINGLE-ION

(86)  TI: 2 CMOS MEMORY CELLS SUITABLE FOR THE DESIGN OF SEU-TOLERANT VLSI 
          CIRCUITS

(87)  TI: THE EFFECT OF LAYOUT MODIFICATION ON LATCHUP TRIGGERING IN CMOS 
          BY EXPERIMENTAL AND SIMULATION APPROACHES

(88)  TI: TEMPERATURE AND ANGULAR-DEPENDENCE OF SUBSTRATE RESPONSE IN SEGR

(89)  TI: SINGLE EVENT BURNOUT OF POWER MOSFETS CAUSED BY NUCLEAR-REACTIONS 
          WITH HEAVY-IONS

(90)  TI: SINGLE EVENT UPSET AND CHARGE COLLECTION MEASUREMENTS USING 
          HIGH-ENERGY PROTONS AND NEUTRONS

(91)  TI: IMPLICATIONS OF THE SPATIAL DEPENDENCE OF THE SINGLE-EVENT-UPSET 
          THRESHOLD IN SRAMS MEASURED WITH A PULSED-LASER

(92)  TI: SINGLE EVENT EFFECTS IN ANALOG-TO-DIGITAL CONVERTERS - DEVICE 
          PERFORMANCE AND SYSTEM IMPACT

(93)  TI: SEU HARDENING OF FIELD-PROGRAMMABLE GATE ARRAYS (FPGAS) FOR SPACE 
          APPLICATIONS AND DEVICE CHARACTERIZATION

(94)  TI: ION-INDUCED SUSTAINED HIGH-CURRENT CONDITION IN A BIPOLAR DEVICE

(95)  TI: EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL 
          POWER MOSFETS

(96)  TI: EVALUATION OF SEGR THRESHOLD IN POWER MOSFETS

(97)  TI: SINGLE-EVENT GATE RUPTURE IN VERTICAL POWER MOSFETS - AN ORIGINAL 
          EMPIRICAL EXPRESSION

(98)  TI: ESTIMATION OF 1-MEV EQUIVALENT NEUTRON FLUENCE FROM DOSIMETRY 
          RESPONSES WITHOUT SPECTRUM UNFOLDING

(99)  TI: ANALYTICAL AND EXPERIMENTAL DOSIMETRY TECHNIQUES FOR CALIBRATING 
          A LOW-ENERGY X-RAY-RADIATION SOURCE

(100) TI: FAST SHUTTER FOR LOW-BACKGROUND RADIATION ENVIRONMENTS AT SPR-III

(101) TI: PIN DIODE AND NEUTRON-SPECTRUM MEASUREMENTS AT THE ARMY PULSE 
          RADIATION FACILITY

(102) TI: SOLID-STATE MICRODOSIMETER FOR RADIATION MONITORING IN SPACECRAFT 
          AND AVIONICS

(103) TI: 5-KEV TO 160-KEV CONTINUOUS-WAVE X-RAY SPECTRAL 
          ENERGY-DISTRIBUTION AND ENERGY FLUX-DENSITY MEASUREMENTS

(104) TI: SINGLE-EVENT-INDUCED CHARGE COLLECTION AND DIRECT CHANNEL 
          CONDUCTION IN SUBMICRON MOSFETS

(105) TI: ON THE ANGULAR-DEPENDENCE OF PROTON-INDUCED EVENTS AND CHARGE 
          COLLECTION

(106) TI: SPICE ANALYSIS OF THE SEU SENSITIVITY OF A FULLY DEPLETED SOI 
          CMOS SRAM CELL

(107) TI: 2-PARAMETER MODEL FOR PREDICTING SEU RATE

(108) TI: A NOVEL-APPROACH FOR MEASURING THE RADIAL-DISTRIBUTION OF CHARGE 
          IN A HEAVY-ION TRACK

(109) TI: TOTAL-DOSE DEPENDENCE OF SOFT-ERROR HARDNESS IN 64KBIT SRAMS 
          EVALUATED BY SINGLE-ION MICROPROBE TECHNIQUE

(110) TI: CHARGE COLLECTION MECHANISMS OF HETEROSTRUCTURE FETS

(111) TI: A NEW CLASS OF SINGLE EVENT HARD ERRORS

(112) TI: IMPLICATIONS OF ANGLE OF INCIDENCE IN SEU TESTING OF MODERN 
          CIRCUITS

(113) TI: A PROPOSED SEU TOLERANT DYNAMIC RANDOM-ACCESS MEMORY (DRAM) CELL

(114) TI: SINGLE EVENT MIRRORING AND DRAM SENSE AMPLIFIER DESIGNS FOR 
          IMPROVED SINGLE-EVENT-UPSET PERFORMANCE

(115) TI: HIGH-ENERGY HEAVY-ION-INDUCED SINGLE EVENT TRANSIENTS IN 
          EPITAXIAL STRUCTURES

(116) TI: 3-DIMENSIONAL SIMULATION OF CHARGE COLLECTION AND MULTIPLE-BIT 
          UPSET IN SI DEVICES

(117) TI: SINGLE EVENT EFFECT GROUND TEST-RESULTS FOR A FIBER OPTIC DATA 
          INTERCONNECT AND ASSOCIATED ELECTRONICS

(118) TI: DARK CURRENT-INDUCED IN LARGE CCD ARRAYS BY PROTON-INDUCED 
          ELASTIC REACTIONS AND SINGLE TO MULTIPLE-EVENT SPALLATION 
          REACTIONS

(119) TI: PROTON-INDUCED CHARGE-TRANSFER DEGRADATION IN CCDS FOR NEAR-ROOM 
          TEMPERATURE APPLICATIONS

(120) TI: A COMPARISON OF MONTE-CARLO AND ANALYTIC TREATMENTS OF 
          DISPLACEMENT DAMAGE IN SI MICROVOLUMES

(121) TI: PARTICLE-INDUCED BIT ERRORS IN HIGH-PERFORMANCE FIBER OPTIC DATA 
          LINKS FOR SATELLITE DATA MANAGEMENT

(122) TI: TOTAL, DOSE AND PROTON TESTING OF A COMMERCIAL HGCDTE ARRAY

(123) TI: RADIATION EFFECTS ON FUSED BICONICAL TAPER WAVELENGTH-DIVISION 
          MULTIPLEXERS

(124) TI: CO-60 GAMMA-RAY AND ELECTRON DISPLACEMENT DAMAGE STUDIES OF 
          SEMICONDUCTORS

(125) TI: A MOBILITY STUDY OF THE RADIATION-INDUCED ORDER EFFECT IN 
          GALLIUM-ARSENIDE

(126) TI: PARAMETER-FREE, PREDICTIVE MODELING OF SINGLE EVENT UPSETS DUE TO 
          PROTONS - NEUTRONS, AND PIONS IN TERRESTRIAL COSMIC-RAYS

(127) TI: STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 
          1-3-MEV PROTONS

(128) TI: ON THE IMPACT OF LOW FLUENCE IRRADIATION WITH MEV PARTICLES ON 
          SILICON DIODE CHARACTERISTICS AND RELATED MATERIAL PROPERTIES

(129) TI: RADIATION-INDUCED DEFECT INTRODUCTION RATES IN SEMICONDUCTORS

(130) TI: DETERMINATION OF THE FERMI-LEVEL POSITION FOR NEUTRON-IRRADIATED 
          HIGH-RESISTIVITY SILICON DETECTORS AND MATERIALS USING THE 
          TRANSIENT CHARGE TECHNIQUE (TCHT)

(131) TI: INVESTIGATION OF POSSIBLE SOURCES OF 1/F NOISE IN IRRADIATED 
          N-CHANNEL POWER MOSFETS

(132) TI: EFFECT OF JUNCTION FRINGING FIELD ON RADIATION-INDUCED LEAKAGE 
          CURRENT IN OXIDE ISOLATION STRUCTURES AND NONUNIFORM DAMAGE NEAR 
          THE CHANNEL EDGES IN MOSFETS

(133) TI: SEU IMMUNITY - THE EFFECTS OF SCALING ON THE PERIPHERAL CIRCUITS 
          OF SRAMS

(134) TI: ANALYSIS OF NEUTRON DAMAGE IN HIGH-TEMPERATURE SILICON-CARBIDE 
          JFETS

(135) TI: BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS

(136) TI: SPACE RADIATION EVALUATION OF 16-MBIT DRAMS FOR MASS MEMORY 
          APPLICATIONS

(137) TI: RADIATION EFFECTS IN OXYNITRIDES GROWN IN N2O

(138) TI: PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN 
          DEGRADATION AT LOW-DOSE RATES

(139) TI: THE CRRES SPACERAD HEAVY-ION MODEL OF THE ENVIRONMENT (CHIME) FOR 
          COSMIC-RAY AND SOLAR PARTICLE EFFECTS ON ELECTRONIC AND 
          BIOLOGICAL-SYSTEMS IN-SPACE

(140) TI: TIME-DEPENDENCE OF SWITCHING OXIDE TRAPS

(141) TI: MICROSCOPIC NATURE OF BORDER TRAPS IN MOS OXIDES

(142) TI: EVIDENCE FOR 2 TYPES OF RADIATION-INDUCED TRAPPED POSITIVE CHARGE

(143) TI: SUMMARY OF THE 1994 IEEE INTERNATIONAL NUCLEAR AND SPACE 
          RADIATION EFFECTS CONFERENCE

(144) TI: SUMMARY OF THE 1994 IEEE INTERNATIONAL NUCLEAR AND SPACE 
          RADIATION EFFECTS CONFERENCE - COMMENTS

(145) TI: INTERFACE DEFECT FORMATION IN MOSFETS BY ATOMIC-HYDROGEN EXPOSURE

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